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Datasheet MGP11N60E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MGP11N60E | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP11N60E/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–bl |
 Motorola Semiconductors |
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| 2 | MGP11N60E | SHORT CIRCUIT RATED LOW ON-VOLTAGE MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP11N60E/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–bl |
 ON |
|
| 1 | MGP11N60ED | SHORT CIRCUIT RATED LOW ON-VOLTAGE MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP11N60ED/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGP11N60ED
IGBT & DIODE IN TO–220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON–VOLTAGE
N–Channel Enhancement–M |
ON |
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