Datasheet MGFS45V2527A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MGFS45V2527A	32W INTERNALLY MATCHED GaAs FET MITSUBISHI SEMICONDUCTOR MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high	Mitsubishi Electric

MGFS45V25 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MGFS45V2527A	32W INTERNALLY MATCHED GaAs FET MITSUBISHI SEMICONDUCTOR MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic pac	Mitsubishi Electric
MGFS45V2527	2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET MITSUBISHI SEMICONDUCTOR MGFS45V2527 2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package	Mitsubishi

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Número de pieza	Descripción	Fabricantes	PDF
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