Datasheet MGF4941AL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MGF4941AL	SUPER LOW NOISE InGaAs HEMT 18/May/2007 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High asso	Mitsubishi Electric Semiconductor

MGF494 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MGF4941AL	SUPER LOW NOISE InGaAs HEMT 18/May/2007 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.3	Mitsubishi Electric Semiconductor
MGF4941CL	Micro-X type plastic package < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101 qualified. Outli	Mitsubishi Electric Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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