Datasheet MGF4931AM Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MGF4931AM	SUPER LOW NOISE InGaAs HEMT June/2004 MITSUBISHI SEMICONDUCTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers	Mitsubishi Electric Semiconductor

MGF493 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MGF4936AM	SUPER LOW NOISE InGaAs HEMT < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. O	Mitsubishi Electric Semiconductor
MGF4935AM	SUPER LOW NOISE InGaAs HEMT May/2008 MITSUBISHI SEMICONDUTOR MGF4935AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4935AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-th	Mitsubishi Electric Semiconductor
MGF4931AM	SUPER LOW NOISE InGaAs HEMT June/2004 MITSUBISHI SEMICONDUCTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-t	Mitsubishi Electric Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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