Datasheet MGF431XG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MGF431XG	Super Low Noise InGaAs HEMT MITSUBISHI SEMICONDUCTOR MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a	Mitsubishi

MGF43 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MGF4319	Super Low Noise InGaAs HEMT MITSUBISHI SEMICONDUCTOR MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasiti	Mitsubishi
MGF4319G	Super Low Noise InGaAs HEMT MITSUBISHI SEMICONDUCTOR MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasiti	Mitsubishi
MGF431XG	Super Low Noise InGaAs HEMT MITSUBISHI SEMICONDUCTOR MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasiti	Mitsubishi

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Número de pieza	Descripción	Fabricantes	PDF
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