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Datasheet MGF1801 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MGF1801 | MICROWAVE POWER GaAs FET MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum |
 Mitsubishi |
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| 3 | MGF1801 | TAPE CARRIER MICROWAVE POWER GaAs FET MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum |
Mitsubishi |
|
| 2 | MGF1801B | MICROWAVE POWER GaAs FET MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum |
Mitsubishi |
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| 1 | MGF1801BT | TAPE CARRIER MICROWAVE POWER GaAs FET |
Mitsubishi |
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