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Datasheet MGF1601 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MGF1601 | MICROWAVE POWER GaAs FET |
 Mitsubishi Electric |
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| 2 | MGF1601B | MICROWAVE POWER GaAs FET MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1601B
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum |
 Mitsubishi |
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| 1 | MGF1601B-01 | High-power GaAs FET < High-power GaAs FET (small signal gain stage) >
MGF1601B-01
S to X BAND / 0.15W non - matched
DESCRIPTION
The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures mini |
Mitsubishi |
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