MGF0952P
L & S BAND GaAs FET
MITSUBISHI SEMICONDUCTOR
MGF0952P
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
DESCRIPTION
The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
FEATURES
• High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25Bm • Hi
Mitsubishi Electric
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MGF0951P
L & S BAND GaAs FET
MITSUBISHI SEMICONDUCTOR
MGF0951P
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
DESCRIPTION
The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
FEATURES
• High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm • Hig
Mitsubishi Electric
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