MGF0918A
Mitsubishi
L & S BAND GaAs FET [ SMD non - matched ]Preliminary
DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MITSUBISHI SEMICONDUCTOR
MGF0918A
L & S BAND GaAs FET [ SMD non – matched ]
FEATURES
· High output power Po=27dBm(TYP.) @f=1
MGF0919A
L & S BAND GaAs FET [ SMD non matched ]MITSUBISHI SEMICONDUCTOR
MGF0919A
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm • High power gain Gp=19dB(TYP.) @f
Mitsubishi
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MGF0916A
L & S BAND GaAs FETMITSUBISHI SEMICONDUCTOR
MGF0916A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm • High power gain Gp=19dB(TYP.) @f=1.
Mitsubishi Electric
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MGF0912A
L & S BAND GaAs FETMITSUBISHI SEMICONDUCTOR
MGF0912A
L & S BAND GaAs FET [ non – matched ]
DESCRIPTION
The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
OUTLINE DRAWING
Unit : millimeters
FEATURES
• High output power Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm
Mitsubishi Electric
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MGF0911A
L / S BAND POWER GaAs FETMITSUBISHI SEMICONDUCTOR 〈GaAs FET〉
MGF0911A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
OUTLINE DRAWING
17.5
1
Unit:millimeters
FEATURES
• Class A operation • High output power P1dB=41dBm(TYP)
Mitsubishi
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MGF0915A
L & S BAND GaAs FETMITSUBISHI SEMICONDUCTOR
MGF0915A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm • High power gain Gp=14.5 dB(TYP.
Mitsubishi Electric
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MGF0917A
L & S BAND GaAs FETMITSUBISHI SEMICONDUCTOR
MGF0917A
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm • High power gain Gp=21dB(TYP.) @f=
Mitsubishi Electric
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