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MGF0911A 전자부품 데이터시트



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기능 검색 결과



MGF0911A  

Mitsubishi
Mitsubishi

MGF0911A

L / S BAND POWER GaAs FET

MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING 17.5 1 Unit:millimeters FEATURES • Class A operatio




관련 부품 MGF091 상세설명

MGF0919A  

  
L & S BAND GaAs FET [ SMD non matched ]

MITSUBISHI SEMICONDUCTOR MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm • High power gain Gp=19dB(TYP.) @f



Mitsubishi
Mitsubishi

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MGF0916A  

  
L & S BAND GaAs FET

MITSUBISHI SEMICONDUCTOR MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm • High power gain Gp=19dB(TYP.) @f=1.



Mitsubishi Electric
Mitsubishi Electric

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MGF0918A  

  
L & S BAND GaAs FET [ SMD non - matched ]

Preliminary DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. MITSUBISHI SEMICONDUCTOR MGF0918A L & S BAND GaAs FET [ SMD non – matched ] FEATURES · High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm · High power gain Gp=20d



Mitsubishi
Mitsubishi

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MGF0912A  

  
L & S BAND GaAs FET

MITSUBISHI SEMICONDUCTOR MGF0912A L & S BAND GaAs FET [ non – matched ] DESCRIPTION The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. OUTLINE DRAWING Unit : millimeters FEATURES • High output power Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm



Mitsubishi Electric
Mitsubishi Electric

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MGF0915A  

  
L & S BAND GaAs FET

MITSUBISHI SEMICONDUCTOR MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm • High power gain Gp=14.5 dB(TYP.



Mitsubishi Electric
Mitsubishi Electric

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MGF0917A  

  
L & S BAND GaAs FET

MITSUBISHI SEMICONDUCTOR MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm • High power gain Gp=21dB(TYP.) @f=



Mitsubishi Electric
Mitsubishi Electric

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