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Datasheet MGF0909 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MGF0909 | L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0909A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
OUTLINE DRAWING
Unit:millimeters
FEATURES
• High output power P1dB=38dBm(TYP.) • High power gain GLP=11dB(TYP.) |
 Mitsubishi |
 |
| 1 | MGF0909A | L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0909A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
OUTLINE DRAWING
Unit:millimeters
FEATURES
• High output power P1dB=38dBm(TYP.) • High power gain GLP=11dB(TYP.) |
Mitsubishi |
|
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