|
MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING Unit:millimeters FEATURES • High output power P1dB=38dBm(TYP.) • High power gain GLP=11dB(TYP.)
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |