Datasheet MG25Q1BS11 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MG25Q1BS11	Silicon N - Channel IGBT TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications MG25Q1BS11 Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emi	Toshiba

MG25Q1B Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MG25Q1BS11	Silicon N - Channel IGBT TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications MG25Q1BS11 Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitt	Toshiba

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Número de pieza	Descripción	Fabricantes	PDF
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