Datasheet MG200Q2YS65H Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MG200Q2YS65H	IGBT Module Silicon N Channel IGBT MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications Unit: mm · · · High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSH	Toshiba Semiconductor

MG200Q2YS Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MG200Q2YS50	Silicon N Channel IGBT GTR Module TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.) @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max.) l Enhancement-mo	Toshiba
MG200Q2YS40	Silicon N Channel IGBT GTR Module TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-m	Toshiba
MG200Q2YS65H	IGBT Module Silicon N Channel IGBT MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications Unit: mm · · · High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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