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Datasheet ME8107 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | ME8107 | P-Channel Enhancement Mode MOSFET ME8107/ME8107-G
P-Channel Enhancement Mode MOSFET, ESD Protected
GENERAL DESCRIPTION
The ME8107 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state |
 Matsuki |
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| 1 | ME8107-G | P-Channel Enhancement Mode MOSFET ME8107/ME8107-G
P-Channel Enhancement Mode MOSFET, ESD Protected
GENERAL DESCRIPTION
The ME8107 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state |
Matsuki |
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