Datasheet ME2345-G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ME2345-G	P-Channel Enhancement Mode Mosfet P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION The ME2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p	Matsuki

ME234 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ME2345A	P-Channel 30V (D-S) MOSFET P-Channel 30V (D-S) MOSFET ME2345A/ME2345A-G GENERAL DESCRIPTION The ME2345A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-sta	Matsuki
ME2345	P-Channel Enhancement Mode Mosfet P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION The ME2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Matsuki
ME2345A-G	P-Channel 30V (D-S) MOSFET P-Channel 30V (D-S) MOSFET ME2345A/ME2345A-G GENERAL DESCRIPTION The ME2345A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-sta	Matsuki

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