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Datasheet ME2345 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | ME2345 | P-Channel Enhancement Mode Mosfet P-Channel Enhancement Mode Mosfet
GENERAL DESCRIPTION
The ME2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p |
 Matsuki |
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| 3 | ME2345-G | P-Channel Enhancement Mode Mosfet P-Channel Enhancement Mode Mosfet
GENERAL DESCRIPTION
The ME2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p |
Matsuki |
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| 2 | ME2345A | P-Channel 30V (D-S) MOSFET P-Channel 30V (D-S) MOSFET
ME2345A/ME2345A-G
GENERAL DESCRIPTION
The ME2345A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These |
Matsuki |
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| 1 | ME2345A-G | P-Channel 30V (D-S) MOSFET P-Channel 30V (D-S) MOSFET
ME2345A/ME2345A-G
GENERAL DESCRIPTION
The ME2345A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These |
Matsuki |
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