ME20N10-G
Matsuki
N-Channel 100V (D-S) MOSFETME20N10/ME20N10-G
N- Channel 100V (D-S) MOSFET
GENERAL DESCRIPTION
The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailor
ME20N10
N-Channel 100V (D-S) MOSFETME20N10/ME20N10-G
N- Channel 100V (D-S) MOSFET
GENERAL DESCRIPTION
The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Thes
Matsuki
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