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ME20N10-G  

Matsuki
Matsuki

ME20N10-G

N-Channel 100V (D-S) MOSFET

ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailor




관련 부품 ME20N10 상세설명

ME20N10  

  
N-Channel 100V (D-S) MOSFET

ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Thes



Matsuki
Matsuki

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