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Datasheet ME20N10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | ME20N10 | N-Channel 100V (D-S) MOSFET ME20N10/ME20N10-G
N- Channel 100V (D-S) MOSFET
GENERAL DESCRIPTION
The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Thes |
 Matsuki |
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| 1 | ME20N10-G | N-Channel 100V (D-S) MOSFET ME20N10/ME20N10-G
N- Channel 100V (D-S) MOSFET
GENERAL DESCRIPTION
The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Thes |
Matsuki |
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