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ME08N20-G  

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ME08N20-G

N-Channel 200V (D-S) MOSFET

ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally




관련 부품 ME08N20 상세설명

ME08N20  

  
N-Channel 200V (D-S) MOSFET

ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally tailored to minimize on-state resist an



Matsuki
Matsuki

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