ME08N20-G
Matsuki
N-Channel 200V (D-S) MOSFETME08N20/ME08N20-G
N- Channel 200V (D-S) MOSFET
GENERAL DESCRIPTION
The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally
ME08N20
N-Channel 200V (D-S) MOSFETME08N20/ME08N20-G
N- Channel 200V (D-S) MOSFET
GENERAL DESCRIPTION
The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally tailored to minimize on-state resist an
Matsuki
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