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Datasheet MBRF2060 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 20 | MBRF2060 | SWITCHMODE Schottky Power Rectifirer MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRF2060CT/D
SWITCHMODE™ Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction |
 Motorola Semiconductors |
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| 19 | MBRF2060 | Schottky Barrier Rectifiers Production specification
Schottky Barrier Rectifiers
MBRF2020---MBRF20100
FEATURES
z High surge capacity.
z For use in low voltage,high frequency
Pb
Lead-free Inverters,free wheeling,and polarity protect-
tion applications.
z Metal silicon junction,majority carrier conduction.
z High curre |
 Galaxy Microelectronics |
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| 18 | MBRF2060 | Isolated 20.0 AMPS. Schottky Barrier Rectifiers MBRF2035 - MBRF20150
Isolated 20.0 AMPS. Schottky Barrier Rectifiers ITO-220AC
.185(4.7) .173(4.4)
.124(3.16) .118(3.00)
.406(10.3) .390(9.90)
.134(3.4)DIA .113(3.0)DIA
.112(2.85) .100(2.55)
Features
Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon juncti |
 Taiwan Semiconductor |
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| 17 | MBRF2060CT | Dual Common-Cathode Schottky Rectifier MBR(F,B)2035CT thru MBR(F,B)2060CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
TO-220AB
ITO-220AB
MBR20xxCT
PIN 1
PIN 2
PIN 3
CASE
3 2 1
TO-263AB K
3 2 1 MBRF20xxCT
PIN 1
PIN 2
PIN 3
2
1
MBRB20xxCT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV) VRR |
 Vishay |
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