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Datasheet MBRF1060 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 24 | MBRF1060 | Schottky Barrier Rectifiers MBRF1030 thru MBRF10100
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 10.0 Amperes
FEATURES
●Metal of silicon rectifier , majority carrier conduction
●Guard ring for transient protection ●Low power loss,high efficiency ●High current capability,low VF ●High |
 Shunye |
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| 23 | MBRF1060 | Schottky Barrier Rectifier ( Diode ) www.vishay.com
MBR(F,B)1035 thru MBR(F,B)1060
Vishay General Semiconductor
Schottky Barrier Rectifier
TO-220AC
ITO-220AC
MBR10xx
PIN 1
PIN 2
2 1
CASE
TO-263AB K
MBRF10xx
PIN 1
PIN 2
2 1
1 MBRB10xx
PIN 1
2
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF TJ max.
10 A 35 V |
 Vishay |
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| 22 | MBRF1060 | Schottky Barrier Rectifiers Production specification
Schottky Barrier Rectifiers
MBRF1030-MBRF10200
FEATURES
z High Surge Capacity.
Pb
z For Use in Low Voltage,High Frequency Lead-free
Inverters,Free Wheeling,and Polarity
Protecation Applications.
z Metal Silicon Junction,Majority Carrier Conduction..
z High Current |
 Galaxy Microelectronics |
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| 21 | MBRF1060 | Isolated Schottky Barrier Rectifiers Features
* Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MBRF1035 THRU MBRF10200
Isolated Schottky Barrier Rectifiers
Package Outline Dimensions in inches (millime |
 JGD |
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| Número de pieza | Descripción | Fabricantes | |
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