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MBR40H100WTG  

ON Semiconductor
ON Semiconductor

MBR40H100WTG

Switch Mode Power Rectifier

MBR40H100WTG Switch Mode Power Rectifier 100 V, 40 A Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 40 A Total (20 A Per Diode Leg) • These Devices are Pb




관련 부품 MBR40H100W 상세설명

MBR40H100WT-F  

  
High Performance Schottky Generation

www.partnumber.co.kr MBR40H100WT-F Vishay High Power Products High Performance Schottky Generation 5.0, 2 x 20 A FEATURES Base 4 common cathode • • • • • • • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF



Vishay Siliconix
Vishay Siliconix

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MBR40H100WT  

  
Schottky Barrier Rectifier ( Diode )

Schottky Barrier Rectifier INCHANGE Semiconductor MBR40H100WT FEATURES ·Low Forward Voltage ·Low Power Loss,High Efficiency ·High Surge Capability ·175℃ Operating Junction Temperature ·Pb-Free Package is Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device per



Inchange Semiconductor
Inchange Semiconductor

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MBR40H100WT  

  
Power Rectifier

MBR40H100WT SWITCHMODE™ Power Rectifier 100 V, 40 A Features and Benefits • • • • • • • Low Forward Voltage: 0.67 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) Guard−Ring fo



ON Semiconductor
ON Semiconductor

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