MBR40H100WTG
ON Semiconductor
Switch Mode Power RectifierMBR40H100WTG
Switch Mode Power Rectifier 100 V, 40 A
Features and Benefits
• Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 40 A Total (20 A Per Diode Leg) • These Devices are Pb
MBR40H100WT-F
High Performance Schottky Generationwww.partnumber.co.kr
MBR40H100WT-F
Vishay High Power Products
High Performance Schottky Generation 5.0, 2 x 20 A
FEATURES
Base 4 common cathode
• • • • • • • • • •
175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF
Vishay Siliconix
PDF
MBR40H100WT
Schottky Barrier Rectifier ( Diode )Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR40H100WT
FEATURES ·Low Forward Voltage ·Low Power Loss,High Efficiency ·High Surge Capability ·175℃ Operating Junction Temperature ·Pb-Free Package is Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
per
Inchange Semiconductor
PDF
MBR40H100WT
Power Rectifier
MBR40H100WT SWITCHMODE™ Power Rectifier 100 V, 40 A
Features and Benefits
• • • • • • •
Low Forward Voltage: 0.67 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) Guard−Ring fo
ON Semiconductor
PDF