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Datasheet MBR10H200CT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MBR10H200CT | Power Schottky Rectifier 深圳深爱半导体股份有限公司 Shenzhen SI Semiconductors Co., LTD.
产品规格书 Product Specification
肖特基二极管/Power Schottky Rectifier
MBR10H200CT
●特点：抗高浪涌性能 高功效 低正向电 大电流 低功耗 符合 RoHS 规范 ●FEATURES：■HIGH SURGE CAPA |
 SI Semiconductors |
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| 3 | MBR10H200CT | Dual Common Cathode Schottky Rectifier MBR10H100CT thru MBR10H200CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halo |
 Taiwan Semiconductor |
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| 2 | MBR10H200CT | Schottky Barrier Rectifiers MBR10H100CT-MBR10H200CT
10.0AMP. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carries Underwriters Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage dro |
 LGE |
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| 1 | MBR10H200CT | ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS PBD10H200CS MBR10H200CT MBR10H200FCT MBR10H200DC SERIES
ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
Voltage 200~250 V Current
10 A
Features
TO-252
Plastic package has Underwriters Laboratory Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound. Low power loss, high |
 Pan Jit International |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
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