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Datasheet MBR10H150CT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | MBR10H150CT | Power Schottky Rectifier 深圳深爱半导体股份有限公司 Shenzhen SI Semiconductors Co., LTD.
产品规格书 Product Specification
肖特基二极管/Power Schottky Rectifier
MBR10H150CT
●特点：抗高浪涌性能 高功效 低正向电 大电流 低功耗 符合 RoHS 规范
●FEATURES：■HIGH SURGE CAP |
 SI Semiconductors |
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| 5 | MBR10H150CT | Dual Common Cathode Schottky Rectifier MBR10H100CT thru MBR10H200CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halo |
 Taiwan Semiconductor |
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| 4 | MBR10H150CT | Schottky Barrier Rectifiers MBR10H100CT-MBR10H200CT
10.0AMP. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carries Underwriters Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage dro |
 LGE |
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| 3 | MBR10H150CT | Dual Common Cathode High Voltage Schottky Rectifier MBR10H150CT, MBRF10H150CT, SB10H150CT-1
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
TO-220AB
ITO-220AB
123
MBR10H150CT
123
MBRF10H150CT
TO-262AA
123
SB10H150CT-1
PIN 1 PIN 3
PIN 2 CASE
PRIMARY CHARACTERISTICS |
 Vishay |
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