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Datasheet MBR10150CT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 22 | MBR10150CT | Schottky Barrier Rectifier ( Diode ) Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10150CT
FEATURES ·Metal silicon junction，majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability，low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature solde |
 Inchange Semiconductor |
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| 21 | MBR10150CT | Schottky Barrier Diode MBR10150CT
Rev.F Mar.-2016
描述 / Descriptions TO-220 塑封封装 肖特基二极管。 Schottky Barrier Diode in a TO-220 Plastic Package.
DATA SHEET
特征 / Features
损耗低，效率高。 Low power loss, high efficiency.
用途 / Applications
用于高频、低压、大电流整流二 |
 BLUE ROCKET ELECTRONICS |
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| 20 | MBR10150CT | Schottky Barrier Diodes MBR10150CT thru MBR10200CT
High Tjm Low IRRM Schottky Barrier Diodes
AC A
C(TAB)
A C A
A=Anode, C=Cathode, TAB=Cathode
MBR10150CT MBR10200CT
VRRM V
150 200
VRMS V
105 140
VDC V
150 200
Dimensions TO-220AB
Dim.
A B C D E F G H J K M N Q R
Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.42 |
 Sirectifier Semiconductors |
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| 19 | MBR10150CT | SCHOTTKY BARRIER RECTIFIER JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Diodes
MBR10150CT SCHOTTKY BARRIER RECTIFIER
FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability an |
 JCET |
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