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MASW-011052 HMIC Silicon PIN Diode SP2T Switch with Integrated Bias Network 2 - 18 GHz Rev. V2 Features Broad Bandwidth Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation Fully Monolithic Glass Encapsulate Construction �
MASW-011021 SURMOUNTTM Silicon PIN Diode SPDT Switch 6 - 14 GHz Features Specified from 8 GHz to 12 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance Surface Mountable, Fully Monolithic Die Glass Encapsulated Construction 20 W Pulsed Power Ha
MASW-011021 SURMOUNTTM Silicon PIN Diode SPDT Switch 6 - 14 GHz Features Specified from 8 GHz to 12 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance Surface Mountable, Fully Monolithic Die Glass Encapsulated Construction 20 W Pulsed Power Ha
MASW-011055 Switch, SP2T 100 Watt Reflective 0.03 - 3.0 GHz Features Suitable for High Power Military and Civilian Radio Applications Power Handling: 100 W @ 85°C Insertion Loss: 0.35 dB @ 2 GHz Isolation: 51 dB @ 2 GHz Lead-Free 5 mm HQFN-12LD Package RoHS* Compliant and 26
MASW-011055 Switch, SP2T 100 Watt Reflective 0.03 - 3.0 GHz Features Suitable for High Power Military and Civilian Radio Applications Power Handling: 100 W @ 85°C Insertion Loss: 0.35 dB @ 2 GHz Isolation: 51 dB @ 2 GHz Lead-Free 5 mm HQFN-12LD Package RoHS* Compliant and 26
MASW-011041 Switch, SP3T 200 W 0.05 - 1.0 GHz Rev. V1 Features 200 W CW Incident Power @ +85°C Low Insertion Loss: <0.5 dB High Isolation: >40 dB Harmonics: <-70 dBc Operates from +V DC Bias Only Lead-Free 9 mm HQFN 20-lead Package Halogen-Free “Green” Mold Compou
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