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Schottky Barrier Diodes (SBD) MA3X786D Silicon epitaxial planar type For super-high speed switching circuit For small current rectification 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse
Schottky Barrier Diodes (SBD) MA3X786D Silicon epitaxial planar type For super-high speed switching circuit For small current rectification 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse
Schottky Barrier Diodes (SBD) MA3X786D Silicon epitaxial planar type For super-high speed switching circuit For small current rectification 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse
Schottky Barrier Diodes (SBD) MA3X786 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (tr
Schottky Barrier Diodes (SBD) MA3X786D Silicon epitaxial planar type For super-high speed switching circuit For small current rectification 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse
Band Switching Diodes MA6X078 (MA78) Silicon epitaxial planar type For band switching 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 Unit : mm 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 • Non connected three elements incorporated in one package • Low forward dynamic resistance rf �
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