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Schottky Barrier Diodes (SBD) MA4X726 (MA726) Silicon epitaxial planar type For super high speed switching For small current rectification I Features • Two isolated elements are contained in one package, allowing high-density mounting • Two MA3X721 (MA721) is contained in one package (two diode
Schottky Barrier Diodes (SBD) MA111 MA750, MA750A Silicon epitaxial planer type (cathode common) For switching power supply s Features q Forward current (average) IF(AV) : 10A type q Sealed in TO-220F full-pack package, with high reliability q Cathode common dual type q Low forward voltage VF 16
Zener Diodes MAZ7000 Series Silicon planar type Unit : mm For stabilization of power supply φ 0.65 max. • Large power dissipation Ptot (800 mW) • Allowing to supply with the radial taping 27 min. I Features Cathode Colored band indicates Vz classification Parameter Repetitive peak forwa
Schottky Barrier Diodes (SBD) MA4X714 Silicon epitaxial planar type Unit : mm For switching circuits For wave detection circuit • Two MA3X704As are contained in one package (Two diodes in a different direction) • Optimum for low-voltage rectification because of its low forward rise voltage (VF
Schottky Barrier Diodes (SBD) MA3D749, MA3D749A Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply 15.0 ± 0.5 9.9 ± 0.3 3.0 ± 0.5 4.6 ± 0.2 2.9 ± 0.2 I Features • Low forward rise voltage VF • TO-220D (Full-pack package) with high dielectric breakdown v
Zener Diodes MAZ7000 Series Silicon planar type Unit : mm For stabilization of power supply φ 0.65 max. • Large power dissipation Ptot (800 mW) • Allowing to supply with the radial taping 27 min. I Features Cathode Colored band indicates Vz classification Parameter Repetitive peak forwa
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