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Switching Diodes MA4X193 Silicon epitaxial planar type Unit : mm Silicon epitaxial planar type 0.65 ± 0.15 2.8 − 0.3 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.5 R 0.2 1.1 − 0.1 + 0.2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Aver
Switching Diodes MA4X160A Silicon epitaxial planar type Unit : mm For switching circuits 0.65 ± 0.15 2.8 − 0.3 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.5 R 1.1 − 0.1 0.4 ± 0.2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Reverse voltage (DC) Repetitive peak forward c
Switching Diodes MA4X160 (MA160) Silicon epitaxial planar type For high-speed switching circuits ■ Features • Two isolated elements are contained in one package, allowing high-density mounting • Centrosymmetrical wiring, allowing to free from the taping direction • Short reverse recovery ti
Switching Diodes MA4X194 Silicon epitaxial planar type Unit : mm For switching circuits 0.65 ± 0.15 2.8 − 0.3 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 1.1 − 0.1 + 0.2 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetit
Switching Diodes MA4X159A Silicon epitaxial planar type Unit : mm For switching circuits 0.65 ± 0.15 2.8 − 0.3 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 0.5 R I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetit
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