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SURMOUNTTM Low Barrier Silicon Schottky Cross-Over Quad Series V 1.00 MA4E2544L-1282 Features Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metaliz
SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series V 2.00 MA4E2532L-1113 MA4E2532M-1113 Features Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Re
SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series V 2.00 MA4E2532L-1113 MA4E2532M-1113 Features Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Re
SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection • Reliable, Multilaye
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Extremely Small 0201 (600x300um) Footprint • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair V 2.00 MA4E2514 Series Case Style 1116 Features A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Rel
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