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AIGaAs PIN Diode High Isolation SPST Switch V 1.00 MA4AGSW900-287T Features n n n n SOT-23 Package Outline (Topview) GND 31 dB Isolation @ 0 Volts @ 3 GHz 0.8 dB Loss @ 10 mA @ 3 GHz < 10 nS Switching Speed Useable from 50 MHz to 6.0 GHz Description M/A-COM's MA4AGSW900-287T is a Gallium Arsen
MA4AGSW4 SP4T AlGaAs PIN Diode Switch Rev. V4 FEATURES Ultra Broad Bandwidth : 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.7 dB Insertion Loss 32 dB Isolation at 50 GHz Low Current consumption -10mA for low loss state +10mA for Isolation state M/A-COM
AlGaAs Solder Bump Flip-Chip PIN Diode Features • Low Series Resistance, 4 Ω • Ultra Low Capacitance, 25 fF • High Switching Cutoff Frequency, 40 GHz • 2 Nanosecond Switching Speed • Can be Driven by Buffered TTL • Silicon Nitride Passivation • Polyimide Scratch Protection • Solder
MA4AGSW8-1 SP8T AlGaAs PIN Diode Switch RoHS Compliant FEATURES Ultra Broad Bandwidth: 50 MHz to 40 GHz Functional Bandwidth : 50 MHz to 50 GHz Low Current consumption. -10mA for low loss state +10mA for Isolation state M/A-COM’s unique AlGaAs hetero-junction anode technolog
AlGaAs SPST Non-Reflective PIN Diode Switch FEATURES • • • • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology. • Si
AlGaAs SP8T PIN Diode Switch V 1.00 MA4AGSW8-2 Features n n n n n n MA4AGSW8-2 Layout Specified Performance : 50 MHz to 40 GHz Operational performance: 50 MHz to 50 GHz 2.0 dB Typical Insertion Loss at 40 GHz 30 dB Typical Isolation at 40 GHz thru 3 Diodes 22 dB Typical Iso
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