MA3X787 전자부품 데이터시트

Schottky Barrier Diodes (SBD) MA3X721D, MA3X721E Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification • Two MA3X721s are contained in one package • Allowing to rectify under (IF(AV) = 200 mA) condition (for the single diode) 2.9 − 0.0

Schottky Barrier Diodes (SBD) MA3X717D, MA3X717E Silicon epitaxial planar type For switching circuits I Features • Two MA3X717s are contained in one package • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704D/E) • Optimum for high-freq

Schottky Barrier Diodes (SBD) MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection s Features • Low forward voltage VF, optimum for low voltage rectification • Low VF type of MA3X704A (MA704A) • Optimum for high frequency rectification because of its short

Schottky Barrier Diodes (SBD) MA3X786E Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification • Two MA3X786s are contained in one package (cathode common) • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-freque

Schottky Barrier Diodes (SBD) MA3X748 Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.65 ± 0.15 2.8 − 0.3 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 • Low VF type of MA2Z720 • High rectification efficiency caused by its low forward-risevoltage (VF) • Optimum for

Schottky Barrier Diodes (SBD) MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer 0.65 ± 0.15 2.8 − 0.3 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.95 • Two MA2X707s are contained in the (Mini (3-pin) type) • Large conversion gain (GC) • Small forward voltage VF • Optimum fo