MA3X786D 전자부품 데이터시트

Schottky Barrier Diodes (SBD) MA3X786E Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification • Two MA3X786s are contained in one package (cathode common) • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-freque

Schottky Barrier Diodes (SBD) MA3X789 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Allowing to rectify under (IF(AV) = 200 mA) condition • Reverse voltage VR (DC value) = 60 V guaranteed 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ±

Schottky Barrier Diodes (SBD) MA3X788 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Allowing to rectify under (IF(AV) = 200 mA) condition • Reverse voltage VR (DC value) = 60 V guaranteed 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ±

Schottky Barrier Diodes (SBD) MA3X787 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 Reverse voltage (DC) Repetitive peak reverse voltage Peak fo

Schottky Barrier Diodes (SBD) MA3X786 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (tr