|
Schottky Barrier Diodes (SBD) MA3X786E Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification • Two MA3X786s are contained in one package (cathode common) • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-freque
Schottky Barrier Diodes (SBD) MA3X721D, MA3X721E Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification • Two MA3X721s are contained in one package • Allowing to rectify under (IF(AV) = 200 mA) condition (for the single diode) 2.9 − 0.0
Schottky Barrier Diodes (SBD) MA3X717D, MA3X717E Silicon epitaxial planar type For switching circuits I Features • Two MA3X717s are contained in one package • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704D/E) • Optimum for high-freq
Schottky Barrier Diodes (SBD) MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection s Features • Low forward voltage VF, optimum for low voltage rectification • Low VF type of MA3X704A (MA704A) • Optimum for high frequency rectification because of its short
Schottky Barrier Diodes (SBD) MA3X789 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Allowing to rectify under (IF(AV) = 200 mA) condition • Reverse voltage VR (DC value) = 60 V guaranteed 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ±
Schottky Barrier Diodes (SBD) MA3X788 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Allowing to rectify under (IF(AV) = 200 mA) condition • Reverse voltage VR (DC value) = 60 V guaranteed 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ±
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |