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Datasheet MA3J745 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MA3J745 | Silicon epitaxial planar type Schottky Barrier Diodes (SBD)
MA3J745
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.425
2.1 ± 0.1 1.25 ± 0.1 0.425
+ 0.1
2.0 ± 0.2 1.3 ± 0.1 0.65 0.65
1 3 2
• Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) |
 Panasonic |
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| 2 | MA3J745D | Silicon epitaxial planar type Schottky Barrier Diodes (SBD)
MA3J745D
Silicon epitaxial planar type
Unit : mm
For switching circuits I Features
• Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr)
2.1 |
Panasonic |
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| 1 | MA3J745E | Silicon epitaxial planar type Schottky Barrier Diodes (SBD)
MA3J745E
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.425
2.1 ± 0.1 1.25 ± 0.1 0.425
+ 0.1
2.0 ± 0.2 1.3 ± 0.1 0.65 0.65
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forw |
Panasonic |
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