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Schottky Barrier Diodes (SBD) MA2SD32 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • IF(AV) = 200 mA rectification is possible. • Small reverse current: IR < 5 µA (at VR = 30 V) 0.80±0.05 0.60+0.05 –0.03 0.80+0.05 –0.03 1 (0.60)
Schottky Barrier Diodes (SBD) MA2SD29 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • Low forward voltage: VF < 0.42 V (at IF = 100 mA) • Optimum for high frequency rectification because of its short reverse recovery time trr . 0.80±0.05 0.60+0.05 –0.03
Schottky Barrier Diodes (SBD) MA2SD25 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 –0.03 0.80±0.05 0.60+0.05 –0.03 0.12+0.05 –0.02 (0.80) (0.60) 0.01±0.01 5° I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak revers
Schottky Barrier Diodes (SBD) MA2SD24 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 –0.03 0.80±0.05 0.60+0.05 –0.03 0.12+0.05 –0.02 (0.80) 2 0.30±0.05 5˚ • Forward current (Average) IF(AV) = 200 mA rectification is possible • Small reverse curren
Schottky Barrier Diodes (SBD)) MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 –0.03 0.80±0.05 0.60+0.05 –0.03 0.12+0.05 –0.02 (0.80) 2 0.30±0.05 5˚ 5˚ • Forward current (Average) IF(AV) = 200 mA rectification is possible • Low forward vol
Schottky Barrier Diodes (SBD) MA2SD10 Silicon epitaxial planar type 0.30 ± 0.05 For super-high speed switching circuit I Features • • • • Sealed in the super small SS-mini type 2-pin package Allowing to rectify under (IF(AV) = 200 mA) condition Low forward rise voltage VF Allowing high-de
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