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Switching Diodes MA2J116 Silicon epitaxial planar type Unit : mm For general purpose I Features • Small S-mini type package, allowing high-density mounting • Soft recovery characteristic (trr = 100 ns) K A 0.625 2 1 Parameter Reverse voltage (DC) Peak reverse voltage Average forward curr
Rectifier Diodes MA2J114 Silicon epitaxial planar type Unit : mm For small power rectification I Features 0.5 ± 0.1 K A 0.625 2 0.16 − 0.06 + 0.1 1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Output current Repetitive peak forward current Non-r
Switching Diodes MA2J113 Silicon epitaxial planar type Unit : mm For switching circuits K A 0.625 I Features • Small S-mini type package, allowing high-density mounting • Ensuring the average forward current capacity IF(AV) = 200 mA • High breakdown voltage (VR = 80 V) 0.5 ± 0.1 2 0.16 �
Switching Diodes MA2J112 Silicon epitaxial planar type Unit : mm For switching circuits K A 0.625 • Small S-mini type package, allowing high-density mounting • Ensuring the average forward current capacity IF(AV) = 200 mA 2 1 Parameter Reverse voltage (DC) Peak reverse voltage Average for
Switching Diodes MA2J111 Silicon epitaxial planar type Unit : mm For switching circuits K A 0.16 − 0.06 + 0.1 • Small S-mini type package, allowing high-density mounting • Short reverse recovery time trr • Small terminal capacitance, Ct • High breakdown voltage (VR = 80 V) 0.625 I F
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