M68AW511A
ST Microelectronics
4 Mbit (512K x8) 3.0V Asynchronous SRAMM68AW511A
4 Mbit (512K x8) 3.0V Asynchronous SRAM
FEATURES SUMMARY s SUPPLY VOLTAGE: 2.7 to 3.6V
s s s s s s
Figure 1. Packages
512K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STAT
M68AW512M
8 Mbit (512K x16) 3.0V Asynchronous SRAMM68AW512M
8 Mbit (512K x16) 3.0V Asynchronous SRAM
FEATURES SUMMARY
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SUPPLY VOLTAGE: 2.7 to 3.6V 512K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O AUTOM
ST Microelectronics
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M68AW512D
8 Mbit 512K x16 3.0V Asynchronous SRAMM68AW512D
8 Mbit (512K x16) 3.0V Asynchronous SRAM
FEATURES SUMMARY s SUPPLY VOLTAGE: 2.7 to 3.6V
s s s s s s
Figure 1. Packages
512K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55, 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O AUTOMATIC POWER DOWN
ST Microelectronics
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