M59BW102N
ST Microelectronics
1 Mbit 64Kb x16 / Burst Low Voltage Flash MemoryM59BW102
1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory
PRELIMINARY DATA
s
2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUENTIAL CYCLE TIME: 25ns RANDOM ACCESS TIME PROGRAMMING TIME: 10µs typical INTERLEAVED ACCESS TIME: 16ns CONTIN
M59BW10225N1T
1 Mbit 64Kb x16 / Burst Low Voltage Flash MemoryM59BW102
1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory
PRELIMINARY DATA
s
2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUENTIAL CYCLE TIME: 25ns RANDOM ACCESS TIME PROGRAMMING TIME: 10µs typical INTERLEAVED ACCESS TIME: 16ns CONTINUOUS MEMORY INTERLEAVING
TSOP40 (N) 10 x
ST Microelectronics
PDF
M59BW102
1 Mbit 64Kb x16 / Burst Low Voltage Flash MemoryM59BW102
1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory
PRELIMINARY DATA
s
2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUENTIAL CYCLE TIME: 25ns RANDOM ACCESS TIME PROGRAMMING TIME: 10µs typical INTERLEAVED ACCESS TIME: 16ns CONTINUOUS MEMORY INTERLEAVING
TSOP40 (N) 10 x
ST Microelectronics
PDF