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M59BW102N 전자부품 데이터시트



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M59BW102N  

ST Microelectronics
ST Microelectronics

M59BW102N

1 Mbit 64Kb x16 / Burst Low Voltage Flash Memory

M59BW102 1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory PRELIMINARY DATA s 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUENTIAL CYCLE TIME: 25ns RANDOM ACCESS TIME PROGRAMMING TIME: 10µs typical INTERLEAVED ACCESS TIME: 16ns CONTIN




관련 부품 M59BW10 상세설명

M59BW10225N1T  

  
1 Mbit 64Kb x16 / Burst Low Voltage Flash Memory

M59BW102 1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory PRELIMINARY DATA s 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUENTIAL CYCLE TIME: 25ns RANDOM ACCESS TIME PROGRAMMING TIME: 10µs typical INTERLEAVED ACCESS TIME: 16ns CONTINUOUS MEMORY INTERLEAVING TSOP40 (N) 10 x



ST Microelectronics
ST Microelectronics

PDF



M59BW102  

  
1 Mbit 64Kb x16 / Burst Low Voltage Flash Memory

M59BW102 1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory PRELIMINARY DATA s 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUENTIAL CYCLE TIME: 25ns RANDOM ACCESS TIME PROGRAMMING TIME: 10µs typical INTERLEAVED ACCESS TIME: 16ns CONTINUOUS MEMORY INTERLEAVING TSOP40 (N) 10 x



ST Microelectronics
ST Microelectronics

PDF




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