M58WR032KU
ST Microelectronics
(M58WR032Kx / M58WR064Kx / M58WR016Kx) Flash memoriesM58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL
16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories
Features
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Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for
M58WR032ET
(M58WR032EB/T) Flash MemoryM58WR032ET M58WR032EB
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast
ST Microelectronics
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M58WR032KL
(M58WR032Kx / M58WR064Kx / M58WR016Kx) Flash memoriesM58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL
16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories
Features
■
Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Prog
ST Microelectronics
PDF
M58WR032EB
(M58WR032EB/T) Flash MemoryM58WR032ET M58WR032EB
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast
ST Microelectronics
PDF