파트넘버.co.kr M58WR032ET 데이터시트 검색

M58WR032ET 전자부품 데이터시트



M58WR032ET 전자부품 회로 및
기능 검색 결과



M58WR032ET  

ST Microelectronics
ST Microelectronics

M58WR032ET

(M58WR032EB/T) Flash Memory

M58WR032ET M58WR032EB 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V




관련 부품 M58WR032 상세설명

M58WR032KU  

  
(M58WR032Kx / M58WR064Kx / M58WR016Kx) Flash memories

M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Prog



ST Microelectronics
ST Microelectronics

PDF



M58WR032KL  

  
(M58WR032Kx / M58WR064Kx / M58WR016Kx) Flash memories

M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Prog



ST Microelectronics
ST Microelectronics

PDF



M58WR032EB  

  
(M58WR032EB/T) Flash Memory

M58WR032ET M58WR032EB 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast



ST Microelectronics
ST Microelectronics

PDF




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