M58LW064
ST Microelectronics
64 Mbit x16 and x16/x32 / Block Erase Low Voltage Flash MemoriesM58LW064A M58LW064B
64 Mbit (x16 and x16/x32, Block Erase) Low Voltage Flash Memories
PRODUCT PREVIEW
s s s
M58LW064A x16 organisation, M58LW064B x16/x32 selectable MULTI-BIT CELL for HIGH DENSITY and LOW COST SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Supply Volt
M58LW064C
ST Microelectronics
64 Mbit (4Mb x16 / Uniform Block / Burst) 3V Supply Flash MemoryM58LW064C
64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH
s
Figure 1. Packages
SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read opera
M58LW064D
ST Microelectronics
64 Mbit (8Mb x8 / 4Mb x16 / Uniform Block) 3V Supply Flash MemoryM58LW064D
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH
s
Figure 1. Packages
SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations