Datasheet M58LT128HSB Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	M58LT128HSB	(M58LT128HSB / M58LT128HST) Flash memories M58LT128HST M58LT128HSB 128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program	STMicroelectronics

M58LT128 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
M58LT128GST	(M58LT128GSB / M58LT128GST) Flash Memories M58LT128GST M58LT128GSB 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories PRELIMINARY DATA Features Summary ■ SUPPLY VOLTAGE – VDD = 1.7 to 2.0V for program, erase and read – VDDQ = 2.7 to 3.6V for I/O Buffers –	STMicroelectronics
M58LT128HST	(M58LT128HSB / M58LT128HST) Flash memories M58LT128HST M58LT128HSB 128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP =	STMicroelectronics
M58LT128HSB	(M58LT128HSB / M58LT128HST) Flash memories M58LT128HST M58LT128HSB 128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP =	STMicroelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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