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Datasheet M58LR128GU Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 M58LR128GU   128 and 256Mbit 1.8V supply Flash memories

M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL 128 and 256Mbit (x16, Mux I/O, Multiple Bank, Multi-Level, Burst) 1.8V supply Flash memories Feature summary ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V
STMicroelectronics
STMicroelectronics		 datasheet M58LR128GU pdf

M58LR12 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
M58LR128FB

Flash Memory

M58LR128FT M58LR128FB 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE Figure 1. Package – VDD = 1.7V to 2.0V for program, erase and read – VDDQ
ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
M58LR128HT

(M58LR128Hx) Flash memories

M58LR128HT M58LR128HB 128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fa
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
M58LR128GT

128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory

M58LR128GT M58LR128GB 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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