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M58LR128GB 전자부품 데이터시트



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M58LR128GB  

STMicroelectronics
STMicroelectronics

M58LR128GB

128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory

M58LR128GT M58LR128GB 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDD




관련 부품 M58LR128 상세설명

M58LR128KB  

  
(M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories

M58LR128KT M58LR128KB M58LR256KT M58LR256KB 128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories Preliminary Data Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for f



Numonyx
Numonyx

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M58LR128KT  

  
(M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories

M58LR128KT M58LR128KB M58LR256KT M58LR256KB 128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories Preliminary Data Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for f



Numonyx
Numonyx

PDF



M58LR128HB  

  
(M58LR128Hx) Flash memories

M58LR128HT M58LR128HB 128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program Synchrono



ST Microelectronics
ST Microelectronics

PDF



M58LR128GU  

  
128 and 256Mbit 1.8V supply Flash memories

M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL 128 and 256Mbit (x16, Mux I/O, Multiple Bank, Multi-Level, Burst) 1.8V supply Flash memories Feature summary ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V



STMicroelectronics
STMicroelectronics

PDF



M58LR128GL  

  
128 and 256Mbit 1.8V supply Flash memories

M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL 128 and 256Mbit (x16, Mux I/O, Multiple Bank, Multi-Level, Burst) 1.8V supply Flash memories Feature summary ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V



STMicroelectronics
STMicroelectronics

PDF



M58LR128FT  

  
Flash Memory

M58LR128FT M58LR128FB 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE Figure 1. Package – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I



ST Microelectronics
ST Microelectronics

PDF




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