M58BW016BT
ST Microelectronics
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash MemoriesM58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V
M58BW016BT100T3T
ST Microelectronics
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash MemoriesM58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V
M58BW016BT100T6T
ST Microelectronics
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash MemoriesM58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V
M58BW016BT100ZA3T
ST Microelectronics
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash MemoriesM58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V
M58BW016BT100ZA6T
ST Microelectronics
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash MemoriesM58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V
M58BW016BT80T3T
ST Microelectronics
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash MemoriesM58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V
M58BW016BT80T6T
ST Microelectronics
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash MemoriesM58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V
M58BW016BT80ZA3T
ST Microelectronics
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash MemoriesM58BW016BT, M58BW016BB M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories
PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V