파트넘버.co.kr M5840 데이터시트 검색

M5840 전자부품 데이터시트



M5840 전자부품 회로 및
기능 검색 결과



M5840  

OKI
OKI

M5840

Searck --->MSM5840





관련 부품 M58 상세설명

M58CR064C  

  
64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHR



ST Microelectronics
ST Microelectronics

PDF



M58LW032A90N6T  

  
32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory

M58LW032A 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations s – VDDQ = 1.8V to VDD for I/O Buffers SYNCHRONO



ST Microelectronics
ST Microelectronics

PDF



M58BW016BT90ZA3T  

  
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1



ST Microelectronics
ST Microelectronics

PDF



M58LW032A90N1T  

  
32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory

M58LW032A 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations s – VDDQ = 1.8V to VDD for I/O Buffers SYNCHRONO



ST Microelectronics
ST Microelectronics

PDF



M58BW016BT90T6T  

  
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1



ST Microelectronics
ST Microelectronics

PDF



M58CR064-ZBT  

  
64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHR



ST Microelectronics
ST Microelectronics

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처