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M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHR
M58LW032A 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations s – VDDQ = 1.8V to VDD for I/O Buffers SYNCHRONO
M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1
M58LW032A 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations s – VDDQ = 1.8V to VDD for I/O Buffers SYNCHRONO
M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1
M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHR
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