파트넘버.co.kr M5817 데이터시트 검색

M5817 전자부품 데이터시트



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기능 검색 결과



M5817  

Weitron Technology
Weitron Technology

M5817

(M5817 - M5819) Surface Mount Schottky Diodes





관련 부품 M58 상세설명

M58BW016BT90ZA3T  

  
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1



ST Microelectronics
ST Microelectronics

PDF



M58CR064D  

  
64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHR



ST Microelectronics
ST Microelectronics

PDF



M58BW016BT90T6T  

  
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1



ST Microelectronics
ST Microelectronics

PDF



M58CR064CZB  

  
64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHR



ST Microelectronics
ST Microelectronics

PDF



M58WR016KU  

  
(M58WR032Kx / M58WR064Kx / M58WR016Kx) Flash memories

M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Prog



ST Microelectronics
ST Microelectronics

PDF



M58BW016BT90T3T  

  
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1



ST Microelectronics
ST Microelectronics

PDF




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