M54HC03
ST Microelectronics
QUAD 2-INPUT OPEN DRAIN NAND GATEM54HC03 M74HC03
QUAD 2-INPUT OPEN DRAIN NAND GATE
. . . . . . .
HIGH SPEED tPZ = 5 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS BALANCE
M54HC03
ST Microelectronics
QUAD 2-INPUT OPEN DRAIN NAND GATEM54HC03 M74HC03
QUAD 2-INPUT OPEN DRAIN NAND GATE
. . . . . . .
HIGH SPEED tPZ = 5 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS BALANCE
M54HC03F1R
ST Microelectronics
QUAD 2-INPUT OPEN DRAIN NAND GATEM54HC03 M74HC03
QUAD 2-INPUT OPEN DRAIN NAND GATE
. . . . . . .
HIGH SPEED tPZ = 5 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS BALANCE
M54HC03F1R
ST Microelectronics
QUAD 2-INPUT OPEN DRAIN NAND GATEM54HC03 M74HC03
QUAD 2-INPUT OPEN DRAIN NAND GATE
. . . . . . .
HIGH SPEED tPZ = 5 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS BALANCE